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基于TSMC 0.18μm CMOS工艺,设计了一种低噪声、高增益、高线性度的差分CMOS低噪声放大器。与传统的共源共栅结构相比,在共栅极上引入一对交叉耦合电容和电感,以消除共栅极的噪声并提高电路的线性度和增益。仿真结果表明,在2.45GHz的工作频率下,该电路的噪声系数仅有1.3 dB,该电路能够提供17.8 dB的正向增益,良好的输入输出匹配,该放大器的输入三阶交调点为-0.9 dBm,功耗小于10 mW。
Abstract：Based on TSMC 0.18μm CMOS technology,a low-noise,high-gain,and high-linearity differential cascode LNA is designed.Compared with the traditional cascode structure,a couple of cross-coupling capacitors and inductors are connected at the gates of common gate transistors to eliminate the influence of the noise of common gate transistors,improve linearity and gain.Simulation results indicate that the noise figure is only 1.3 dB,the forward gain is 17.8 dB,the input and output impedances match well,the input third-order intercept point(IIP3) is-0.9 dBm,and power dissipation is less than 10mW at 2.45GHz.
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基本信息:
中图分类号:TN722.3
引用信息:
[1]纪娜,何国荣.基于噪声抵消和线性度提高的差分LNA的设计[J].微型电脑应用,2013,29(03):14-16.
2013-03-20
2013-03-20